ALD growth of ZnO on GaN: Schottky barrier height engineering using ZnO interlayer-Reference-Cited by-同舟云学术

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ALD growth of ZnO on GaN: Schottky barrier height engineering using ZnO interlayer

Published:2022-12 Issue: Volume:33 Page:104434
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Kim Hogyoung,Jung Myeong Jun,Lee Min Hwan,Choi Byung Joon

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference61 articles.

1. ZnO–nanostructures, defects, and devices;Schmidt-Mende;Mater. Today,2007

2. ZnO Schottky barriers and Ohmic contacts;Brillson;J. Appl. Phys.,2011

3. Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target;Wei;Opt. Laser Technol.,2009

4. Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy;Heo;J. Appl. Phys.,2005

5. The growth and annealing of single crystalline ZnO films by low-pressure MOCVD;Ye;J. Cryst. Growth,2002

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Grain Boundaries on Nanoscale Charge Transport Properties of Transparent Conductive ZnO-Based Electrodes;ACS Applied Electronic Materials;2023-12-26

2. High performance foreign-dopant-free ZnO/Al Ga N ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer;Journal of Alloys and Compounds;2023-03

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