Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction-Reference-Cited by-同舟云学术

Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction

Published:2004-06 Issue:6 Volume:38 Page:672-674
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ataev B. M.,Alivov Ya. I.,Mamedov V. V.,Makhmudov S. Sh.,Magomedov B. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1766370.pdf

Reference8 articles.

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3. D. C. Look, D. C. Reynolds, and J. W. Hemsky, Appl. Phys. Lett. 75, 811 (1999).

4. A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, and M. O. Vorob’ev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 284 (2002) [Semiconductors 36, 265 (2002)].

5. A. N. Georgobiani and M. V. Kotlyarevskii, Neorg. Mater. 33, 185 (1997).

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