GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques-Reference-Cited by-同舟云学术

GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques

Published:2004-03 Issue:3 Volume:38 Page:355-359
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Andreev V. M.,Khvostikov V. P.,Kalyuzhnyi N. A.,Titkov S. S.,Khvostikova O. A.,Shvarts M. Z.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1682614.pdf

Reference14 articles.

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3. S. J. Wojtczuk, S. P. Tobin, C. J. Keavney, et al., IEEE Trans. Electron Devices 37, 455 (1990).

4. S. J. Wojtczuk, S. P. Tobin, M. M. Sanfacon, et al., in Proceedings of 22nd IEEE Photovoltaic Special Conference (Las Vegas, 1991), p. 73.

5. N. H. Karam, R. P. King, B. T. Cavicchi, et al., IEEE Trans. Electron Devices 46, 2116 (1999).

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