Surface gettering of background impurities and defects in GaAs wafers-Reference-Cited by-同舟云学术

Surface gettering of background impurities and defects in GaAs wafers

Published:2001-02 Issue:2 Volume:35 Page:177-180
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vlasenko L. S.,Gorelenok A. T.,Emtsev V. V.,Kamanin A. V.,Poloskin D. S.,Shmidt N. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1349927.pdf

Reference12 articles.

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3. E. I. Ivanov, L. V. Lopatina, V. L. Sukhanov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 16, 207 (1982) [Sov. Phys. Semicond. 16, 129 (1982)].

4. L. F. Zakharenkov, V. V. Kozlovskii, A. T. Gorelenok, and N. M. Shmidt, in Semiconductor Technology: Processing and Novel Fabrication Techniques, Ed. by M. E. Levinstein and M. S. Shur (Wiley, New York, 1997), p. 91.

5. A. T. Gorelenok, V. L. Kryukov, and G. P. Furmanov, Pis’ma Zh. Tekh. Fiz. 20(13), 60 (1994) [Tech. Phys. Lett. 20, 546 (1994)].

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