P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors-Reference-Cited by-同舟云学术

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P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors

Published:2006-11 Issue:11 Volume:32 Page:987-989
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Gorelenok A. T.,Tomasov A. A.,Shmidt N. M.,Il’ichev É. A.,Lantratov V. M.,Zadiranov Yu. M.,Brunkov P. N.,Titkova O. V.,Kalyuzhnyĭ N. A.,Mintarov S. A.,Mdivani V. N.,Katsoev V. V.,Katsoev L. V.,Shmelev S. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785006110241.pdf

Reference11 articles.

1. V. A. Bespalov, A. V. Vorontsov, A. A. Gorbatsevich, et al., Zh. Tekh. Fiz. 74(3), 28 (2004) [Tech. Phys. 49, 310 (2004)].

2. E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 490 (2004) [Semiconductors 38, 472 (2004)].

3. V. N. Botnaryuk, Yu. V. Zhilyaev, A. M. Ivanov, et al., Pis’ma Zh. Tekh. Fiz. 24(7), 8 (1998) [Tech. Phys. Lett. 24, 250 (1998)].

4. R. A. Achmadullin, V. F. Dvoryankin, G. G. Dvoryankina, et al., Pis’ma Zh. Tekh. Fiz. 28(1), 34 (2002) [Tech. Phys. Lett. 28, 15 (2002)].

5. V. M. Zaletin, I. I. Protasov, O. A. Matveev, et al., At. Energ. 39, 68 (1975).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses;Semiconductors;2009-12

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