FEATURES STUDIES OF TRANSITION LAYERS IN SEMICONDUCTOR HETEROSYSTEMS

Abstract

Studies of spectral characteristics in Schottky's contact specimens showed that photemf generated by mono­chromatic light, according to the formation mechanism, has a predominantly lateral nature, that is, in a hetero­system there are at least two areas separated by a potential barrier along the interface, with different conductivity levels. The feature of the photoemf spectral characteristics is a variations its appearance when changing the thermal annealing temperature of the studied heterosystems. A significant characteristic and a small amplitude of the characteristic indicates the formation of a transition layer, relatively homogeneous and with insignificant, compared with the volume of GaAs, the doping concentration. If the spectral characteristic has one maximum and amplitude, which several times exceeds the amplitude of a significant characteristic, which means the formation of a transition layer in the Schottky contact depletion area with high conductivity, compared with a quasine-neutral region of a semiconductor. The distribution of lateral photoemf along the sample also has a significant character. In order to obtain the correct results relative to the heterosystem transition layer, it is necessary to measure spectral acute characteristics at a distance from the point change sign of the emf that several times the diffusion length of non-equilibrium charge carriers in GaAs. The problem of the formation of a metal-semiconductor contact and other heterosystems accompanied by the occurrence of heterogeneous transition layers, always paid attention. The use of the proposed photovoltaic method allows to establish the degree of homogeneity of semiconductor layers, components of the structure and predict the redistribution of current density flowing through the physical scope of the device.