Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation-Reference-Cited by-同舟云学术

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Published:2010-10 Issue:10 Volume:55 Page:1463-1471
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Poklonski N. A.,Gorbachuk N. I.,Shpakovski S. V.,Wieck A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784210100117.pdf

Reference36 articles.

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3. V. N. Brudnyi, N. G. Kolin, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 1031 (2007) [Semiconductors 41, 1011 (2007)].

4. M. McPherson, Nucl. Instrum. Methods Phys. Res. A 488, 100 (2002).

5. M. McPherson, Physica B 344, 52 (2004).

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