Affiliation:
1. Belarusian State University
2. “INTEGRAL” JSC
Abstract
Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hz–30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance of p–n-junctions of the bipolar p–n–p-transistor in active mode.The KT814G p–n–p-transistor manufactured by JSC “INTEGRAL” was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for base–emitter and base–collector p–n-junctions are defi at direct currents in base from 0.8 to 46 µA.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices.
Publisher
Belarusian National Technical University
Subject
General Earth and Planetary Sciences,Water Science and Technology,Geography, Planning and Development
Reference16 articles.
1. Ng K.K. Complete Guide to Semiconductor Devices. New York, Wiley, 2002, xxiv+740 p.
2. Sze S.M., Lee M.K. Semiconductor Devices: Physics and Technology, New York, Wiley, 2012, x+578 p.
3. Nicollian E.H., Goetzberger A. The Si-SiO2 interface – electrical properties as determined by metalinsulator-silicon conductance technique. Bell Syst. Tech. J., 1967, vol. 46, no. 6, pp. 1055–1133. DOI: 10.1002/j.1538-7305.1967.tb01727.x
4. Baumann P. Parameterextraktion bei Halbleiterbauelementen. Simulation mit PSPICE, Wiesbaden, Springer Vieweg, 2019, x+191 p. DOI: 10.1007/978-3-658-26574-8
5. Poklonski N.A., Gorbachuk N.I., Shpakovski S.V., Filipenia V.A., Skuratov V.A., Wieck A. Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction–defect layer formed by 250 MeV krypton implantation. Physica B, 2009, vol. 404, no. 23–24, pp. 4667–4670. DOI: 10.1016/j.physb.2009.08.129
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