Redistribution of Dislocations in Silicon near Stress Concentrators-Reference-Cited by-同舟云学术

Redistribution of Dislocations in Silicon near Stress Concentrators

Published:2005 Issue:11 Volume:47 Page:2049
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Orlov A. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.2131143.pdf

Reference13 articles.

1. Yu. S. Boyarskaya, D. Z. Grabko, M. I. Medinskaya, and N. A. Palistrant, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31(2), 179 (1997) [Semiconductors 31 (2), 139 (1997)].

2. N. I. Tarbaev, Fiz. Tverd. Tela (St. Petersburg) 40(10), 1845 (1998) [Phys. Solid State 40 (10), 1672 (1998)].

3. A. A. Skvortsov, A. M. Orlov, V. A. Frolov, and A. A. Solov’ev, Fiz. Tverd. Tela (St. Petersburg) 42(11), 1998 (2000) [Phys. Solid State 42 (11), 2054 (2000)].

4. I. V. Ostrovskii, L. P. Steblenko, and A. B. Nadtochii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(3), 257 (2000) [Semiconductors 34 (3), 251 (2000)].

5. M. V. Mezhennyi, M. G. Mil’vidskii, V. F. Pavlov, and V. Ya. Reznik, Fiz. Tverd. Tela (St. Petersburg) 43(1), 47 (2001) [Phys. Solid State 43 (1), 47 (2001)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of DC Current on Movement of Dislocations in P-Silicon Single Crystals in Field of Internal Stresses;Solid State Phenomena;2021-04

2. Topology of an anodically formed oxide film on a silicon single crystal;Physics of the Solid State;2015-08

3. Effect of an electric field on the dislocation structure of silicon upon indentation in water;Physics of the Solid State;2009-01

4. On the redistribution of dislocations in silicon single crystals in the vicinity of stress concentrators;Physics of the Solid State;2007-06