Optically active centers in Si/Si1 − x Ge x :Er heterostructures containing Er3+ ions-Reference-Cited by-同舟云学术

Optically active centers in Si/Si1 − x Ge x :Er heterostructures containing Er3+ ions

Published:2009-07 Issue:7 Volume:43 Page:877-884
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Krasilnikova L. V.,Strepikhova M. V.,Baidakova N. A.,Drozdov Yu. N.,Krasilnik Z. F.,Chalkov V. Yu.,Shengurov V. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609070094.pdf

Reference18 articles.

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3. M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil’nikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, and Z. F. Krasil’nik, Pis’ma Zh. Éksp. Teor. Fiz. 81, 614 (2005) [JETP Lett. 81, 494 (2005)].

4. S. P. Svetlov, V. G. Shengurov, V. Yu. Chalkov, Z. F. Krasil’nik, B. A. Andreev, and Yu. N. Drozdov, Izv. RAN. Ser. Fiz. 65(2), 203 (2001).

5. V. P. Kuznetsov, R. A. Rubtsova, T. N. Sergievskaya, and V. V. Postnikov, Kristallografiya 16, 432 (1971) [Sov. Phys. Crystallogr. 16, 357 (1971)].

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