Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies-Reference-Cited by-同舟云学术

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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

Published:2006-02 Issue:1 Volume:288 Page:65-69
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Stepikhova M.V.,Krasil’nikova L.V.,Krasil’nik Z.F.,Shengurov V.G.,Chalkov V.Yu.,Svetlov S.P.,Zhigunov D.M.,Timoshenko V.Yu.,Kashkarov P.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. S. Coffa, L. Tsybeskov (Eds.), Silicon-Based Optoelectronics, MRS Bull. 23 (1998) 16.

2. Properties of Strained and Relaxed Silicon Germanium;Humlicek,1995

3. L.V. Krasilnikova, M.V. Stepikhova, Z.F. Krasilnik, Phys. Solid State (2005), submitted for publication.

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1. Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire;Semiconductors;2016-09

2. Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates;Semiconductors;2014-03

3. The processes of erbium impurity excitation in Si/Si1−xGex:Er/Si heteroepitaxial structures;Optical Materials;2013-05

4. Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures;Journal of Luminescence;2012-12

5. Ambient erbium luminescence in silicon and silicon-germanium films;Emerging Materials Research;2012-02

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