Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications-Reference-Cited by-同舟云学术

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

Published:2006-03-01 Issue:3 Volume:21 Page:574-583
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Krasilnik Zakhary F.,Andreev Boris A.,Kryzhkov Denis I.,Krasilnikova Ludmila V.,Kuznetsov Viktor P.,Remizov Dmitry Yu.,Shmagin Viacheslav B.,Stepikhova Margarita V.,Yablonskiy Artem N.,Gregorkievicz Tom,Vinh Nguyen Q.,Jantsch Wolfgang,Przybylinska Hanka,Timoshenko Victor Yu.,Zhigunov Denis M.

Abstract

The paper is a brief retrospective review of our contribution to the Si:Er problem in the last decade. It contains a description of the experimental facilities, results of the light-emitting media (Si:Er and Si1−xGex:Er) research, and device applications.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon

2. Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy

3. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

4. Photon Emission from Avalanche Breakdown in Silicon

5. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

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