Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon-Reference-Cited by-同舟云学术

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Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon

Published:2001-12 Issue: Volume:308-310 Page:340-343
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Vinh N.Q.,Przybylińska H.,Krasil’nik Z.F.,Andreev B.A.,Gregorkiewicz T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping

2. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy

3. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen

4. Study of the Zeeman Effect of Er3+ in GaAs:Er,O

5. Optically active erbium centers in silicon

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1. Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD;MRS Advances;2017-01

2. Large photoluminescence enhancement of Er^3+: GdVO_4 crystal in both green and middle infrared regions under moderate low magnetic fields;Optical Materials Express;2016-10-06

3. Magnetic field induced extraordinary photoluminescence enhancement in Er3+:YVO4 single crystal;Journal of Applied Physics;2015-08-28

4. Urbach absorption edge in epitaxial erbium-doped silicon;Journal of Applied Physics;2015-02-07

5. Absorption induced photoluminescence intensity modulation of Er3+:YVO4 single crystal under pulsed high magnetic field;Journal of Luminescence;2013-12

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