High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor

Published:2009-07 Issue:7 Volume:43 Page:939-942
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tsai Jung-Hui,Chiu Shao-Yen,Lour Wen-Shiung,Guo Der-Feng

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609070227.pdf

Reference11 articles.

1. C. T. Chuang and K. Chin, IEEE J. Sol. St. Circuits 29, 836 (1994).

2. Y. T. Lin and S. S. Lu, IEEE Microw. Guided Wave Lett. 14, 463 (2004).

3. J. I. Song, C. Caneau, W. P. Hong, and K. B. Chough, Electron. Lett. 30, 605 (1994).

4. J. H. Tsai, Y. C. Chu, S. Y. Chiu, K. P. Zhu, Y. J. Chu, and J. S. Chen, Semicond. Sci. Technol. 20, 152 (2005).

5. H. Kawai, T. Kobayashi, F. Nakamura, and K. Taira, Electron. Lett. 25, 609 (1989).

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