On organization of drainage of radiation defects from working area of an integrated circuit
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Energy
Link
https://link.springer.com/content/pdf/10.1007/s41683-023-00121-3.pdf
Reference21 articles.
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2. Barbashov VM, Kalashnikov OA (2017) Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model. Russian Microelectron 46:155–161
3. Fahey PM, Griffin PB, Plummer JD (1989) Point defects and dopant diffusion in silicon. Rev Mod Phys 61(2):289
4. Ivchenko VA (2013) Development of amorphized states in subsurface metal regions under radiation exposure. Technical Physics Letters 39:357–359
5. Kalinina EV, Kossov VG, Yafaev RR, Strel’chuk AM, Violina GN (2010) A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum. Semiconductors 44:778–788
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