Potentially high-performance carbon-doped GaInP/GaAs heterojunction bipolar transistors with different compositional base gradings
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940386?crawler=true&mimetype=application/pdf
Reference12 articles.
1. Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
2. Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE
3. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
4. (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
5. Current gain and transit-time effects in HBTs with graded emitter and base regions
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1. High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor;Semiconductors;2009-07
2. InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction;Advanced Materials Research;2008-06
3. Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
4. GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector;IEEE Transactions on Electron Devices;1998
5. Influence of pseudomorphic base-emitter spacer layers on current-induced degradation of beryllium-doped InGaAs/InAlAs heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1996
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