Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals-Reference-Cited by-同舟云学术

Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

Published:2018-08-22 Issue:9 Volume:52 Page:1097-1103
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tolkacheva E. A.,Markevich V. P.,Murin L. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782618090221.pdf

Reference33 articles.

1. B. M. Babich, N. I. Bletskan, and E. F. Venger, Oxygen in Silicon Single Crystals (Interpres LTD, Kiev, 1997) [in Russian].

2. A. Chroneos, E. N. Sgourou, C. A. Londos, and U. Schwingenschlögl, Appl. Phys. Rev. 2, 0213061 (2015).

3. J. L. Lindström, L. I. Murin, T. Hallberg, V. P. Markevich, B. G. Svensson, M. Kleverman, and J. Hermansson, Nucl. Instrum. Methods Phys. Res., Sect. B 186, 121 (2002).

4. F. P. Korshunov and Yu. V. Bogatyrev, Izv. NAN Belarusi, Ser. Fiz.-Tekh. Nauk, No. 4, 106 (2008).

5. L. I. Murin, J. L. Lindström, V. P. Markevich, A. Misiuk, and C. A. Londos, J. Phys.: Condens. Matter 17, S2237 (2005).

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