1. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Wittaker, G. A. Mouron, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 59, 3276 (1991).
2. T. R. Weatherford, D. McMorrow, A. B. Campbell, and W. R. Curtice, Appl. Phys. Lett. 67, 703 (1995).
3. V. V. Chaldyshev, M. A. Putyato, B. R. Semyagin, V. V. Preobrazhenskii, O. P. Pchelyakov, A. V. Khan, V. G. Kanaev, L. S. Shirokova, A. V. Golikov, V. A. Kagadei, Yu. V. Lilenko, and N. V. Karpovich, Élektron. Promyshl., Nos. 1–2, 154 (1998).
4. L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, and V. V. Chaldyshev, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz. 45(8), 3 (2002) [Russian Physics Journal 45 (8), 735 (2002)].
5. L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, and V. V. Chaldyshev, in Nanotechnologies in Semiconductor Electronics, Ed. by A. L. Aseev (SO RAN, Novosibirsk, 2004) [in Russian].