Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

Author:

Baidus N. V.,Vikhrova O. V.,Zvonkov B. N.,Malysheva E. I.,Trufanov A. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Neutron Irradiation on the Spectral Characteristics of InxGa1 – xN LEDs;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-10

2. Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures;Semiconductors;2020-12

3. Influence of Disordered Regions on the Optoelectronic Properties of Heterostructures with Ge/Si Nanoislands Irradiated with Fast Neutrons;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-11

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