Enhancement of room-temperature photoluminescence in InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1623324
Reference11 articles.
1. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
2. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
3. Quantum dot infrared photodetectors
4. Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector
5. Exciton Storage in Semiconductor Self-Assembled Quantum Dots
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1. Enhanced Photocurrent Generation in Proton‐Irradiated “Giant” CdSe/CdS Core/Shell Quantum Dots;Advanced Functional Materials;2019-09-09
2. Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy;Advanced Science Letters;2018-08-01
3. Photoluminescence;Springer Series in Optical Sciences;2018
4. Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot–vanadium dioxide nanoparticle system;Journal of Nanophotonics;2017-08-19
5. Introduction to Infrared Detectors and Quantum Dots;Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures;2017-08-05
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