Characterization of neutron radiation damage in GaAs-Reference-Cited by-同舟云学术

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Characterization of neutron radiation damage in GaAs

Published:1989-12 Issue:6 Volume:36 Page:1937-1944
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Griffin P.J.,Lazo M.S.,Luera T.F.,Kelly J.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/1717/00045390.pdf?arnumber=45390

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons;Semiconductors;2015-03

2. A review of the 40-year history of the NSREC'S dosimetry and facilities session (1963-2003);IEEE Transactions on Nuclear Science;2003-06

3. AlGaAs diode laser blue shift resulting from fast neutron irradiation;Journal of Applied Physics;1992-06

4. Neutron damage equivalence in GaAs;IEEE Transactions on Nuclear Science;1991-12

5. Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons;IEEE Transactions on Nuclear Science;1991-02

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