Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer-Reference-Cited by-同舟云学术

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Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

Published:2010-05 Issue:5 Volume:44 Page:610-615
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Dementyev P. A.,Dunaevskii M. S.,Samsonenko Yu. B.,Cirlin G. E.,Titkov A. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610050118.pdf

Reference25 articles.

1. Y. Li, J. Xiang, F. Quang, S. Gradecak, Y. Wu, H. Yan, D. A. Blom, and C. M. Lieber, NanoLett. 6, 1468 (2006).

2. B. J. Ohlsson, M. T. Bjork, M. H. Magnusson, K. Deppert, L. Samuelson, and L. R. Wallenberg, Appl. Phys. Lett. 79, 3335 (2001).

3. M. T. Bjork, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 80, 1058 (2002).

4. H. Sakaki, Jpn. J Appl. Phys. 19, 1735 (1980).

5. R. B. Markus, T. S. Ravi, T. Gimmer, K. Chin, D. Liu, W. J. Orvis, D. R. Ciarlo, C. E. Hunt, and J. Trujilo, Appl. Phys. Lett. 56, 236 (1990).

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