Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

Published:2010-07 Issue:7 Volume:44 Page:898-903
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vasil’evskii I. S.,Galiev G. B.,Matveev Yu. A.,Klimov E. A.,Požela J.,Požela K.,Sužiedėlis A.,Paškevič Č.,Jucienė V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610070122.pdf

Reference17 articles.

1. W. J. Stillman and M. S. Shur, J. Nanoelectron. Optoelectron. 2, 209 (2007).

2. N. Dyakonova, A. El. Fatimy, J. Lusakowski, and W. Knap, Appl. Phys. Lett. 88, 141906 (2006).

3. W. P. Hong and P. K. Bhattacharya, IEEE Trans. Electron. Dev. 34, 1491 (1987).

4. K. S. Yoon, G. B. Stringfellow, and R. J. Huber, J. Appl. Phys. 63, 1126 (1988).

5. D. Xu, H. G. Heiß, S. A. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Weimann, and G. Abstreiter, IEEE Trans. Electron. Dev. 45, 21 (1998).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures;Physics Procedia;2015

2. Field effect as a method for controlling the quality of i-InP-based heteronanostructures with two-dimensional electron gases;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-11

3. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures;Semiconductors;2011-09

4. Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields;Semiconductors;2011-06

5. Hot electron transport in heterostructures;Semiconductor Science and Technology;2010-12-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3