Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures-Reference-Cited by-同舟云学术

Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures

Published:2015 Issue: Volume:72 Page:425-430
ISSN:1875-3892
Container-title:Physics Procedia
language:en
Short-container-title:Physics Procedia

Author:

Yuzeeva N.A.,Galiev G.B.,Klimov E.A.,Oveshnikov L.N.,Lunin R.A.,Kulbachinskii V.A.

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

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2. Electronic parameters of the two-dimensional electron gas in modulation-doped single quantum wells due to an embedded deep step layer;Kim;Journal of Applied Physics,2001

3. Study of band nonparabolicity using electron–cyclotron resonance of InGaAs/InAlAs quantum wells below 100 T;Shibata;Physica E,2002

4. Strain effects;Choo;electronic parameters, and electronic structures in modulation-doped InxGa1-xAs/InyAl1-yAs coupled step-rectangular quantum wells, Journal of Applied Physics 94,2003

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