Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy-Reference-Cited by-同舟云学术

Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy

Published:2019-11 Issue:11 Volume:53 Page:1524-1528
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lipkova E. A.,Efimova A. I.,Gonchar K. A.,Presnov D. E.,Eliseev A. A.,Lapshin A. N.,Timoshenko V. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619110113.pdf

Reference12 articles.

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2. E. Krali and Z. A. K. Durrani, Appl. Phys. Lett. 102, 143102 (2013).

3. H. Zhang, R. Zhang, K. S. Schramke, N. M. Bedford, K. Hunter, U. R. Kortshagen, and P. Nordlander, ACS Photon. 4, 963 (2017).

4. K. S. Sekerbayev, E. T. Taurbayev, A. I. Efimova, V. Yu. Timoshenko, and T. I. Taurbayev, Semiconductors 51, 1047 (2017).

5. H. Han, Z. Huang, and W. Lee, Nano Today 9, 271 (2014).

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