Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy-Reference-Cited by-同舟云学术

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Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Published:2020-07-23 Issue:11 Volume:51 Page:2146-2152
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Efimova A. I.¹^ORCID,Lipkova E. A.¹,Gonchar K. A.¹,Presnov D. E.¹²,Eliseev A. A.³,Pavlikov A. V.¹,Timoshenko V. Yu.¹⁴⁵

Affiliation:

1. Faculty of Physics Lomonosov Moscow State University Moscow Russia

2. Skobeltsyn Institute of Nuclear Physics Lomonosov Moscow State University Moscow Russia

3. Faculty of Materials Science Lomonosov Moscow State University Moscow Russia

4. PhysBio Institute National Research Nuclear University “MEPhI” Moscow Russia

5. Lebedev Physical Institute Russian Academy of Sciences Moscow Russia

Funder

MEPhI Academic Excellence Project

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5956

Reference43 articles.

1. High thermoelectric figure-of-merits from large-area porous silicon nanowire arrays

2. Enhanced thermoelectric performance of rough silicon nanowires

3. Plasmonics in the mid-infrared

4. Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires

5. Influence of Dielectric Anisotropy on the Absorption Properties of Localized Surface Plasmon Resonances Embedded in Si Nanowires

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