Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers-Reference-Cited by-同舟云学术

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Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

Published:2017-08 Issue:8 Volume:51 Page:1047-1051
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sekerbayev K. S.,Taurbayev Ye. T.,Efimova A. I.,Timoshenko V. Yu.,Taurbayev T. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782617080279.pdf

Reference11 articles.

1. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).

2. L. A. Golovan, V. Yu. Timoshenko, and P. K. Kashkarov, Phys. Usp. 50, 595 (2007).

3. V. Sivakov and S. Christiansen, J. Nanoelectron. Optoelectron. 7, 583 (2012).

4. N. Künzner, D. Kovalev, J. Diener, E. Gross, V. Yu. Timoshenko, G. Polisski, F. Koch, and M. Fujii, Opt. Lett. 26, 1265 (2001).

5. V. Yu. Timoshenko, L. A. Osminkina, A. I. Efimova, L. A. Golovan, P. K. Kashkarov, D. Kovalev, N. Künzner, E. Gross, J. Dienez, and F. Koch, Phys. Rev. B 67, 113405 (2003).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman spectroscopy of silicon nanowires formed by metal-assisted chemical etching;Journal of Physics: Conference Series;2019-12-01

2. Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy;Semiconductors;2019-11

3. Raman diagnostics of free charge carriers in boron‐doped silicon nanowires;Journal of Raman Spectroscopy;2019-09-09

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