Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In x Ga1 − x N/GaN quantum wells-Reference-Cited by-同舟云学术

Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In x Ga1 − x N/GaN quantum wells

Published:2009-04 Issue:4 Volume:43 Page:447-457
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mezdrogina M. M.,Krivolapchuk V. V.,Petrov V. N.,Kozhanova Yu. V.,Danilovski E. Yu.,Kuz’min R. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609040083.pdf

Reference18 articles.

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3. S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, and N. N. Ledentsov, Fiz. Tekh. Poluprovodn. 42, 187 (2008) [Semiconductors 42, 188 (2008)].

4. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, and J. K. Sheu, Solid State Electron. 47, 2027 (2003).

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