InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2185622
Reference14 articles.
1. E. F. Schubert, Light Emitting Diodes (Cambridge University Press, Cambridge, 2003), p. 185.
2. High-Density Plasma-Induced Etch Damage of GaN
3. In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
4. High brightness ingan green leds with an ito on n/sup ++/ -sps upper contact
5. InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
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