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In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

  • Published:2003-11 Issue:11 Volume:47 Page:2027-2030
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Wu L.W.,Chang S.J.,Su Y.K.,Chuang R.W.,Hsu Y.P.,Kuo C.H.,Lai W.C.,Wen T.C.,Tsai J.M.,Sheu J.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 58 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Efficiency Enhancement in Tunnel Junction GaN Light Emitting Diodes;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28

2. Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells;Materials Research Express;2017-08-11

3. Improvement of luster consistency between the p-Pad and the n-Pad of GaN-based light-emitting diodes via the under-etching process;Journal of the Korean Physical Society;2017-04

4. Thin-GaN LED Materials;Handbook of Advanced Lighting Technology;2017

5. Yellow–red emission from (Ga,In)N heterostructures;Journal of Physics D: Applied Physics;2015-09-11
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