Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers-Reference-Cited by-同舟云学术

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Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

Published:2007-11 Issue:11 Volume:41 Page:1356-1360
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shaleev M. V.,Novikov A. V.,Yablonskiĭ A. N.,Kuznetsov O. A.,Drozdov Yu. N.,Lobanov D. N.,Krasil’nik Z. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607110152.pdf

Reference21 articles.

1. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).

2. O. G. Schmidt, K. Eberl, and Y. Rau, Phys. Rev. B 62, 16 715 (2000).

3. M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, et al., Appl. Phys. Lett. 88, 011 914 (2006).

4. A. V. Novikov, M. V. Shaleev, A. N. Yablonskiy, et al., Semicond. Sci. Technol. 22, S29 (2007).

5. N. Usami, F. Issiki, D. K. Nayak, et al., Appl. Phys. Lett. 67, 524 (1995).

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