Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2158506
Reference19 articles.
1. Si/SiGe heterostructures: from material and physics to devices and circuits
2. Enhancement of radiative recombination in Si‐based quantum wells with neighboring confinement structure
3. Room-temperature SiGe light-emitting diodes
4. Influence of the mesa size on Ge island electroluminescence properties
5. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
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1. Light emission from ion-implanted SiGe quantum dots grown on Si substrates;Materials Science in Semiconductor Processing;2024-10
2. Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots;Applied Physics Letters;2017-03-06
3. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers;Semiconductors;2016-12
4. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer;Semiconductors;2015-08
5. Effect of strain on the electronic and optical properties of Ge–Si dome shaped nanocrystals;Physical Chemistry Chemical Physics;2015
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