Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface-Reference-Cited by-同舟云学术

Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

Published:2006-07 Issue:7 Volume:40 Page:808-811
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Parchinskiĭ P. B.,Vlasov S. I.,Ligaĭ L. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378260607013X.pdf

Reference14 articles.

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2. Yu. S. Chistov and V. F. Synorov, Physics of MIS Structures (Voronezh. Gos. Univ., Voronezh, 1986) [in Russian].

3. V. Ya. Kiblik, R. O. Litvinov, V. G. Litovchenko, and N. M. Litvinenko, Ukr. Fiz. Zh. 22, 1097 (1977).

4. S. Z. Zaĭnabidinov, Sh. Kh. Ῐulchiev, and P. B. Parchinskiĭ, Uzb. Fiz. Zh. 3, 201 (2001).

5. P. B. Parchinskiĭ, S. I. Vlasov, R. A. Muminov, et al., Pis’ma Zh. Tekh. Fiz. 26(10), 40 (2000) [Tech. Phys. Lett. 26, 420 (2000)].

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