Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

Published:2020-09 Issue:9 Volume:54 Page:1155-1160
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tarasova E. A.,Obolensky S. V.,Khazanova S. V.,Grigoryeva N. N.,Golikov O. L.,Ivanov A. B.,Puzanov A. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782620090274.pdf

Reference19 articles.

1. V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul’nikov, N. A. Cherkashin, M. N. Mizerov, and V. M. Ustinov, Semiconductors 50, 244 (2016).

2. E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, and A. B. Makarov, Semiconductors 51, 1490 (2017).

3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

4. E. A. Tarasova, D. S. Demidova, S. V. Obolensky, A. G. Fefelov, and D. I. Ducov, Semiconductors 47, 152 (2013).

5. R. E. Williams and D. W. Shaw, IEEE Trans. Electron Dev. 25, 600 (1978).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping;Микроэлектроника;2024-07-17

2. Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping;Russian Microelectronics;2024-02

3. Changes in the Characteristics of Semiconductor Structures of Microwave Amplifiers under the Action of Pulsed Laser Radiation;Technical Physics;2024-01

4. A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors;Semiconductors;2022-06

5. Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs;Semiconductors;2021-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3