Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping-Reference-Cited by-同舟云学术

Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping

Published:2024-07-17 Issue:1 Volume:53 Page:3-7
ISSN:0544-1269
Container-title:Микроэлектроника
language:
Short-container-title:Mikroèlektronika

Author:

Golikov O. L.¹,Kodochigov N. E.¹,Obolensky S. V.¹,Puzanov A. S.¹,Tarasova E. A.¹,Khazanova S. V.¹

Affiliation:

1. Lobachevsky State University of Nizhny Novgorod (NNSU)

Abstract

The paper presents the results of studies of C–V characteristics of GaAs/In0.53Ga0.47As HEMT before and after neutron irradiation with a fluence of (6.3 ± 1.3) × 1014 cm–2. Based on the experimentally obtained characteristics, the effective electron distribution profiles of the structure were calculated before and after radiation impact. The effect of radiation defects on the δ-layers of the structure was analyzed.

Publisher

The Russian Academy of Sciences

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