1. S. V. Obolenskii, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 6, 31 (2002).
2. M. Shur, GaAs Devices and Circuits (Plenum, New York, London, 1986; Mir, Moscow, 1991).
3. D. A. Moran, K. Kalna, E. Boyd, F. McLelland, L. L. Zhuang, C. R. Stanley, A. Asenov, and L. Thayne, in Proceedings of the Conference ESSDERC 2003 (Department of Electronics Engineering, Univ. of Glasgow, Glasgow, 2003), p. 315.
4. R. Zulig, in Gallium Arsenide in Microelectronics, Ed. by N. Einspruck and W. Wissman (Mir, Moscow, 1988), p. 501 [in Russian].
5. E. A. Tarasova and S. V. Obolenskii, Vestn. NNovg. Univ. Lobachevskogo, No. 5, 348 (2011).