Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser-Reference-Cited by-同舟云学术

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Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser

Published:2012-05 Issue:5 Volume:46 Page:684-689
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Korenev V. V.,Savelyev A. V.,Zhukov A. E.,Omelchenko A. V.,Maximov M. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782612050120.pdf

Reference16 articles.

1. V. M. Ustinov and A. E. Zhukov, Semicond. Sci. Technol. 15(8), R41 (2000).

2. A. E. Zhukov and A. R. Kovsh, Quantum Electron. 38, 408 (2008).

3. A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, Opt. Lett. 32, 793 (2007).

4. A. V. Savel’ev, M. V. Maksimov, and A. E. Zhukov, Semiconductors 45, 241 (2011).

5. A. V. Savel’ev, I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, and A. E. Zhukov, Semiconductors 43, 1597 (2009).

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1. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss;Applied Physics Letters;2017-09-25

2. Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges;Journal of Physics: Conference Series;2015-11-02

3. Spatial hole burning and spectral stability of a quantum-dot laser;Semiconductors;2015-11

4. Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers;SPIE Proceedings;2015-05-18

5. The analytical approach to optimization of active region structure of quantum dot laser;Journal of Physics: Conference Series;2014-10-27

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