1. A. V. Ankudinov, A. I. Besyulkin, A. G. Kolmakov, et al., Physica B 340–342, 462 (2003).
2. A. V. Ankudinov, R. V. Zolotareva, A. G. Kolmakov, et al., in Proceedings of the 3rd All-Russia Workshop on Nitrides of Gallium, Indium, and Aluminum: Structures and Devices, Moscow, 2004, pp. 76–78.
3. J. P. Donnelly and A. G. Milnes, IEEE Trans. Electron Dev. 14, 63 (1967).
4. M. M. Sobolev, A. V. Gittsovich, M. I. Papentsev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 26, 1760 (1992) [Sov. Phys. Semicond. 26, 985 (1992)].
5. M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 184 (1999) [Semiconductors 33, 157 (1999)].