Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure-Reference-Cited by-同舟云学术

Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure

Published:2003-12 Issue: Volume:340-342 Page:462-465
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ankudinov A.V.,Besyulkin A.I.,Kolmakov A.G.,Lundin W.V.,Ratnikov V.V.,Shmidt N.M.,Sitnikova A.A.,Titkov A.N.,Usikov A.S.,Yakimov E.B.,Zavarin E.E.,Zolotareva R.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

2. Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III-V Nitrides

3. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

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