The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates-Reference-Cited by-同舟云学术

The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates

Published:2017-11 Issue:11 Volume:43 Page:976-978
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Shubina K. Yu.,Berezovskaya T. N.,Mokhov D. V.,Mizerov A. M.,Nikitina E. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/article/10.1134/S1063785017110116/fulltext.html

Reference11 articles.

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3. M. Sobanska, K. Klosek, Z. R. Zytkiewicz, J. Borysiuk, B. S. Witkowski, E. Lusakowska, A. Reszka, and R. Jakiela, Cryst. Res. Technol. 47, 307 (2012).

4. M. Kumar, M. K. Rajpalke, B. Roul, T. N. Bhat, N. Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, Appl. Surf. Sci. 257, 2107 (2011).

5. A. Ishizaka and Y. Shiraki, J. Eltrochem. Soc. 133, 666 (1986).

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