Plasma-assisted MBE growth of GaN on Si(111) substrates-Reference-Cited by-同舟云学术

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Plasma-assisted MBE growth of GaN on Si(111) substrates

Published:2011-10-06 Issue:3 Volume:47 Page:307-312
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Sobanska M.,Klosek K.,Zytkiewicz Z. R.,Borysiuk J.,Witkowski B. S.,Lusakowska E.,Reszka A.,Jakiela R.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference20 articles.

1. GaN as Seen by the Industry

2. Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy

3. The influence of substrate etched on the quality of GaN epilayers

4. Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates

5. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

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1. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation;Surfaces and Interfaces;2024-08

2. Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature;Journal of Vacuum Science & Technology A;2023-07-14

3. Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring;physica status solidi (RRL) – Rapid Research Letters;2023-04-27

4. Low temperature epitaxial technology for GaN-based materials;Chinese Science Bulletin;2022-07-01

5. Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation;Optical Materials;2022-06

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