Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

Author:

Grekhov I. V.,Rodin P. B.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Reference17 articles.

1. I. V. Grekhov and A. F. Kardo-Sysoev, Pis’ma Zh. Tekh. Fiz. 5, 950 (1979) [Sov. Tech. Phys. Lett. 5, 395 (1979)].

2. I. V. Grekhov, A. F. Kardo-Susoev, L. S. Kostina, and S. V. Shenderey, Electron. Lett. 17, 422 (1981).

3. V. M. Tuchkevich and I. V. Grekhov, New Principles of Commutating Large Powers by Semiconductor Devices (Nauka, Leningrad, 1988) [in Russian].

4. R. J. Focia, E. Schamiloghu, C. B. Flederman, F. J. Agee, and J. Gaudet, IEEE Trans. Plasma Sci. 25, 138 (1997).

5. A. F. Kardo-Sysoev, New Semiconductor Devices for Generation of Nanoand Subnanosecond Pulses, in Ultra-Wideband Radar Technology, Ed. by J. D. Taylor (CRS Press, Boca Raton, 2001).

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