High growth rate of AlN in a planetary MOVPE reactor-Reference-Cited by-同舟云学术

High growth rate of AlN in a planetary MOVPE reactor

Published:2010-12 Issue:12 Volume:36 Page:1133-1135
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Lundin W. V.,Nikolaev A. E.,Sakharov A. V.,Brunkov P. N.,Zavarin E. E.,Tsatsulnikov A. F.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785010120205.pdf

Reference12 articles.

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3. C. Pernot, M. Kim, Sh. Fukahori, et al., Appl. Phys. Express 3(6), 061 004 (2010).

4. A. A. Wolfson and E. N. Mokhov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 1430 (2010) [Semiconductors 44, 1383 (2010)].

5. T. Yu. Chemekova, O. V. Avdeev, S. S. Nagalyuk, E. N. Mokhov, and Yu. N. Makarov, Abstracts of Papers. The 5th All-Russia Conf. “Gallium, Indium, and Aluminum Nitrides: Structures and Devices“ (February 1–3, 2010, Moscow), p. 25.

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