Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures-Reference-Cited by-同舟云学术

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Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

Published:2008-03 Issue:3 Volume:106 Page:517-527
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Smagina J. V.,Zinovyev V. A.,Nenashev A. V.,Dvurechenskiĭ A. V.,Armbrister V. A.,Teys S. A.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/S1063776108030114.pdf

Reference32 articles.

1. L. P. Kouwenhoven, D. G. Austing, and S. Tarucha, Rep. Prog. Phys. 64, 701 (2001).

2. Zh. I. Alferov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 3 (1998) [Semiconductors 32, 1 (1998)].

3. K. Brunner, Rep. Prog. Phys. 65, 27 (2002).

4. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].

5. A. I. Yakimov, A. V. Dvurechenskiĭ, N. P. Stepina, et al., Zh. Éksp. Teor. Fiz. 119, 574 (2001) [JETP 92, 500 (2001)].

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3. Modeling the formation kinetics of wedge-shaped germanium quantum dots on silicon;Bulletin of the Russian Academy of Sciences: Physics;2014-10

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