Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low Temperature Plasmas for Etching and Purification of Materials), Danilin, B.S., Ed., Moscow: Energoatomizdat, 1987.
2. Franz, G., Kelp, A., and Messerer, P., Analysis of chlorine-containing plasmas applied in III/V semiconductor processing, J. Vac. Sci. Technol., 2000, vol. 18, no. 5, pp. 2053–2061.
3. Shul, R.J., McClellan, G.B., and Briggs, R.D., Highdensity plasma etching of compound semiconductors, J. Vac. Sci. Technol., 1997, vol. 15, no. 3, pp. 633–638.
4. Pearton, S.J., Vasile, M.J., and Jones, K.S., Reactive ion etching of GaAs with CCl2F2/O2: etch rates, surface chemistry, and residual damage, J. Appl. Phys., 1989, vol. 65, no. 3, pp. 1281–1292.
5. Christophorou, L.G., Olthoff, J.K., and Wang, Y.J., Electron interaction with CCl2F2, Phys. Chem. Ref. Data, 1997, vol. 26, no. 5, pp. 1205–1237.
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