Long-wavelength photodiodes based on Ga1−x InxAsySb1−y wit composition near the miscibility boundary-Reference-Cited by-同舟云学术

Long-wavelength photodiodes based on Ga1−x InxAsySb1−y wit composition near the miscibility boundary

Published:1999-02 Issue:2 Volume:33 Page:216-220
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Andreev I. A.,Kunitsyna E. V.,Mikhailova M. P.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187673.pdf

Reference19 articles.

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3. J. Lucas, Infrared Phys. 25, No. 1/2, 227 (1985).

4. R. H. Pierson and A. N. Fletcher, Anal. Chem. 28, 1218 (1956).

5. A. N. Baranov, A. N. Imenkov, O. P. Kapranchik, A. M. Litvak, N. A. Charykov, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 16, 19 (1990) [Tech. Phys. Lett. 16, 121 (1990)].

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