Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range-Reference-Cited by-同舟云学术

Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range

Published:2009-01 Issue:1 Volume:35 Page:67-69
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Imenkov A. N.,Zhurtanov B. E.,Astakhova A. P.,Kalinina K. V.,Mikhailova M. P.,Sipovskaya M. A.,Stoyanov N. D.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785009010209.pdf

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3. I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 249 (1999) [Semiconductors 33, 216 (1999)].

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5. A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, M. P. Mikhailova, M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 33(1), 23 (2007) [Tech. Phys. Lett. 33, 11 (2007)].

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