Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors-Reference-Cited by-同舟云学术

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

Published:2010-05 Issue:5 Volume:44 Page:672-677
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Semenov A. N.,Terent’ev Ya. V.,Meltser B. Ya.,Solov’ev V. A.,Popova T. V.,Nashchekin A. V.,Andreev I. A.,Kunitsyna E. V.,Usikova A. A.,Yakovlev Yu. P.,Ivanov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610050222.pdf

Reference21 articles.

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3. A. P. Astakhov, B. E. Zhurtanov, A. N. Imenkov, M. P. Mikhailova, M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 33, 8 (2007) [Tech. Phys. Lett. 33, 11 (2007)].

4. I. A. Andreev, E. V. Kunitsina, M. P. Mikhailova, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 33, 249 (1999) [Semiconductors 33, 216 (1999)].

5. V. I. Vasil’ev, A. G. Deryagin, V. I. Kuchinskii, V. M. Smirnov, G. S. Sokolovskii, D. N. Tret’yakov, and N. N. Faleev, Pis’ma Zh. Tekh. Fiz. 24, 58 (1998) [Tech. Phys. Lett. 24, 66 (1998)].

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