Oscillations of the charge in oxide at silicon surface as an origin of the process leading to the long-range effect-Reference-Cited by-同舟云学术

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Oscillations of the charge in oxide at silicon surface as an origin of the process leading to the long-range effect

Published:2011-04 Issue:2 Volume:5 Page:276-278
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Levshunova V. L.,Pokhil G. P.,Tetel’baum D. I.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451011030141.pdf

Reference10 articles.

1. D. I. Tetel’baum, E. V. Kuril’chik, and Yu. A. Mendeleva, Poverkhnost’, No. 3, 94 (2009) [J. Surf. Invest. 3, 249 (2009)].

2. S. Flach and A. V. Gorbach, Phys. Rep. 467, 1 (2008).

3. V. A. Gritsenko, Usp. Fiz. Nauk 179, 921 (2009) [Phys. Usp. 52, 869 (2009)].

4. M. P. Shaskol’skaya, Crystallography (Vysshaya shkola, Moscow, 1976) [in Russian].

5. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, New York, 1984).

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