POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS-Reference-Cited by-同舟云学术

POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS

Published:2024-04-24 Issue:1 Volume: Page:34-40
ISSN:2710-4230
Container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES
language:
Short-container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES

Author:

VABISHCHEVICH S.¹,VABISHCHEVICH N.¹,BRINKEVICH D.²,PROSOLOVICH V.²,LUKASHEVICH M.²,YUSHCHIK A.²,KHARCHENKO A.³

Affiliation:

1. Euphrosyne Polotskaya State University of Polotsk

2. Belarusian State University

3. Research Institute for Nuclear Problems of Belarusian State University

Abstract

The optical and strength properties of Kapton polyimide films implanted with manganese ions with an energy of 40 keV and a dose of 5·1016 – 1·1017 cm–2 at a current density in the ion beam of 4 μA/cm2 have been studied. It has been experimentally established that during the process of ion implantation, modification of a thin nearsurface layer of polyimide occurs not only on the implanted side, but also on the reverse side of the film. Radiationstimulated modification of the back surface of the polyimide film leads to the formation of a surface layer up to 5 μm thick with increased microhardness. This may be due to the restructuring of metastable defects formed during the film manufacturing process and the simultaneous relaxation of elastic stresses in the surface layer. During the implantation process, a decrease in the intensity of absorption bands with maxima at ~ 2870 and ~ 2750 nm is observed, due to the evaporation of residual water under high vacuum conditions and reactions of residual solvent molecules, as well as radiation-induced processes on by-products of polyimide synthesis.

Publisher

Polotsk State University

Reference16 articles.

1. Brinkevich, D. I., Brinkevich, S. D., Vabishchevich, N. V., Odzhaev, V. B., & Prosolovich, V. S. (2014). Ion implantation of positive photoresists. Russian Microelectronics, 43(3), 194–200. DOI: 10.1134/S106373971401003X.

2. Larson, L. A., Williams, J. M., & Current, M. I. (2011). Ion Implantation for Semiconductor Doping and Materials Modification. Reviews of Accelerator Science and Technology, (4), 11–40. DOI: 10.1142/S1793626811000616

3. Kharchenko, A. A., Brinkevich, D. I., Brinkevich, S. D., Lukashevich, M. G., & Odzhaev, V. B. (2015). Radiationinduced modification of polymer surfaces. J. of Surface Investigation. X-ray, synchrotron and neutron techniques, 9(2), 371–376. DOI: 10.1134/S1027451015020317.

4. Vabishhevich, C. A., Brinkevich, D. I., Volobuev, V. S., Nazhim, F. A., Lukashevich, M. G., Valeev, V. F., … Odzhaev V. B. (2010). Fiziko-mehanicheskie svojstva pripoverhnostnyh sloev polijetilentereftalata i poliimida, modificirovannyh implantaciej ionov nikelja [Physicomechanical Properties of Surface Layers of Polyethylenterephtalate and Polyimide, Implanted by Nickel Ions]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (9), 74–82. (In Russ., abstr. in Engl.).

5. Brinkevich, D. I., Kharchenko, A. A., Brinkevich, S. D., Lukashevich, M. G., Odzhaev, V. B., Valeev, V .F., … Khaibullin, R. I. (2017). Radiation-induced modification of reflection spectra beyond the ion path region in polyimide films. J. of Surface Investigation. X-ray, synchrotron and neutron techniques, 11(4), 801–806. DOI: 10.1134/S1027451017040188.